STP11NM60FP

Teknik Özellikler

Gate To Source Voltage Vgs

30V

Parça Durumu

Obsolete

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

3

Yükseklik

16.4mm

Vgsth Max Id

5V @ 250μA

Voltage Rated Dc

650V

Power Dissipation

35W

Transistor Element Material

SILICON

Akım Değeri

11A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Vgs Max

±30V

Power Dissipation Max

35W Tc

Jedec95 Code

TO-220AB

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Kaplaması

Matte Tin (Sn) - annealed

ECCN Kodu

EAR99

Uzunluk

10.4mm

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

44A

Element Configuration

Single

Kurşunsuz

Lead Free

Ambalaj

Tube

Transistor Application

SWITCHING

Rise Time

20ns

Rds On Max Id Vgs

450m Ω @ 5.5A, 10V

Montaj

Through Hole

Genişlik

4.6mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

30nC @ 10V

Montaj Tipi

Through Hole

Turn On Delay Time

20 ns

JESD-609 Kodu

e3

Fall Time Typ

11 ns

Current Continuous Drain Id25

11A Tc

Fet Type

N-Channel

Input Capacitance Ciss Max Vds

1000pF @ 25V

Kılıf / Paket

TO-220-3 Full Pack

Seri

MDmesh™

Continuous Drain Current Id

11A