STP11NM50N

Teknik Özellikler

Transistor Element Material

SILICON

Jedec95 Code

TO-220AB

Power Dissipation Max

70W Tc

Vgs Max

±25V

Reach Svhc

No SVHC

Çalışma Sıcaklığı

-55°C~150°C TJ

Threshold Voltage

3V

Radyasyon Dayanımı

No

Gate To Source Voltage Vgs

25V

Parça Durumu

Obsolete

Vgsth Max Id

4V @ 250μA

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Yükseklik

15.75mm

Power Dissipation

70W

Ambalaj

Tube

Element Configuration

Single

Kurşunsuz

Lead Free

Rise Time

10ns

Transistor Application

SWITCHING

Rds On Max Id Vgs

470m Ω @ 4.5A, 10V

ECCN Kodu

EAR99

Terminal Kaplaması

Matte Tin (Sn)

Uzunluk

10.4mm

Operating Mode

ENHANCEMENT MODE

Fall Time Typ

10 ns

JESD-609 Kodu

e3

Fet Type

N-Channel

Current Continuous Drain Id25

8.5A Tc

Input Capacitance Ciss Max Vds

547pF @ 50V

Seri

MDmesh™ II

Kılıf / Paket

TO-220-3

Montaj

Through Hole

Genişlik

4.6mm

Gate Charge Qg Max Vgs

19nC @ 10V

Direnç

470mOhm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Turn On Delay Time

8 ns

Montaj Tipi

Through Hole

Turn Off Delay Time

33 ns