STP11N65M5

Teknik Özellikler

Power Dissipation

85W

Turn On Delay Time

23 ns

Montaj Tipi

Through Hole

Vgsth Max Id

5V @ 250μA

Gate Charge Qg Max Vgs

17nC @ 10V

RoHS Durumu

ROHS3 Compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yükseklik

15.75mm

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Parça Durumu

Active

Genişlik

4.6mm

Montaj

Through Hole

Gate To Source Voltage Vgs

25V

Seri

MDmesh™ V

Kılıf / Paket

TO-220-3

Radyasyon Dayanımı

No

Fabrika Tedarik Süresi

17 Weeks

Çalışma Sıcaklığı

150°C TJ

Input Capacitance Ciss Max Vds

644pF @ 100V

Fet Type

N-Channel

Jedec95 Code

TO-220AB

Current Continuous Drain Id25

9A Tc

Power Dissipation Max

85W Tc

Vgs Max

±25V

Transistor Element Material

SILICON

Pin Sayısı

3

Drain Currentmax Abs Id

9A

Operating Mode

ENHANCEMENT MODE

Uzunluk

10.4mm

Drainsource On Resistancemax

0.48Ohm

ECCN Kodu

EAR99

Number Of Elements

1

Temel Parça No

STP11N

Continuous Drain Current Id

9A

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

3

Drain To Source Breakdown Voltage

650V

Rds On Max Id Vgs

480m Ω @ 4.5A, 10V

Transistor Application

SWITCHING

Ambalaj

Tube