STP10N60M2

Teknik Özellikler

Genişlik

4.6mm

Parça Durumu

Active

Gate To Source Voltage Vgs

25V

Montaj

Through Hole

Turn On Delay Time

8.8 ns

Montaj Tipi

Through Hole

Gate Charge Qg Max Vgs

13.5nC @ 10V

Vgsth Max Id

4V @ 250μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yükseklik

15.75mm

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

RoHS Durumu

ROHS3 Compliant

Direnç

600mOhm

Fet Type

N-Channel

Jedec95 Code

TO-220AB

Current Continuous Drain Id25

7.5A Tc

Power Dissipation Max

85W Tc

Vgs Max

±25V

Fall Time Typ

13.2 ns

Transistor Element Material

SILICON

Number Of Channels

1

Seri

MDmesh™ II Plus

Radyasyon Dayanımı

No

Kılıf / Paket

TO-220-3

Çalışma Sıcaklığı

-55°C~150°C TJ

Fabrika Tedarik Süresi

16 Weeks

Input Capacitance Ciss Max Vds

400pF @ 100V

ECCN Kodu

EAR99

Number Of Elements

1

Temel Parça No

STP10

Continuous Drain Current Id

7.5A

Pin Sayısı

3

Case Connection

DRAIN

Operating Mode

ENHANCEMENT MODE

Uzunluk

10.4mm

Rise Time

8ns

Transistor Application

SWITCHING

Ambalaj

Tube

Turn Off Delay Time

32.5 ns

Kurşunsuz

Lead Free