STP100N10F7

Teknik Özellikler

Input Capacitance Ciss Max Vds

4369pF @ 50V

Threshold Voltage

4.5V

Çalışma Sıcaklığı

-55°C~175°C TJ

Fabrika Tedarik Süresi

13 Weeks

Reach Svhc

No SVHC

Radyasyon Dayanımı

No

Kılıf / Paket

TO-220-3

Seri

DeepGATE™, STripFET™ VII

Transistor Element Material

SILICON

Fall Time Typ

16 ns

Current Continuous Drain Id25

80A Tc

Power Dissipation Max

150W Tc

Vgs Max

±20V

Jedec95 Code

TO-220AB

Fet Type

N-Channel

Avalanche Energy Rating Eas

400 mJ

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Yükseklik

15.75mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

RoHS Durumu

ROHS3 Compliant

Direnç

8MOhm

Gate Charge Qg Max Vgs

61nC @ 10V

Vgsth Max Id

4.5V @ 250μA

Turn On Delay Time

27 ns

Montaj Tipi

Through Hole

Power Dissipation

150W

Montaj

Through Hole

Gate To Source Voltage Vgs

20V

Genişlik

4.6mm

Parça Durumu

Active

Rds On Max Id Vgs

8m Ω @ 40A, 10V

Drain To Source Breakdown Voltage

100V

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz

Lead Free

Element Configuration

Single

Turn Off Delay Time

46 ns

Ambalaj

Tube

Transistor Application

SWITCHING

Rise Time

40ns