STN3P6F6

Teknik Özellikler

Seri

DeepGATE™, STripFET™ VI

Kılıf / Paket

TO-261-4, TO-261AA

Fabrika Tedarik Süresi

20 Weeks

Max Junction Temperature Tj

175°C

Input Capacitance Ciss Max Vds

340pF @ 48V

Fet Type

P-Channel

Fall Time Typ

3.7 ns

JESD-609 Kodu

e3

Number Of Channels

1

Montaj Tipi

Surface Mount

Turn On Delay Time

6.4 ns

Gate Charge Qg Max Vgs

6.4nC @ 10V

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Direnç

130MOhm

Genişlik

3.7mm

Montaj

Surface Mount

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

4

Drain To Source Breakdown Voltage

-60V

Turn Off Delay Time

14 ns

Pin Sayısı

4

Drain Currentmax Abs Id

3A

Case Connection

DRAIN

Terminal Pozisyonu

DUAL

Number Of Elements

1

Continuous Drain Current Id

-3A

REACH Uyumluluk Kodu

not_compliant

Temel Parça No

STN3P

Çalışma Sıcaklığı

-55°C~175°C TJ

Reach Svhc

No SVHC

Threshold Voltage

-4V

Power Dissipation Max

2.6W Tc

Vgs Max

±20V

Terminal Formu

GULL WING

Transistor Element Material

SILICON

Power Dissipation

2.6W

Drain To Source Voltage Vdss

60V

Vgsth Max Id

4V @ 250μA

Yükseklik

1.9mm