STL80N75F6

Teknik Özellikler

Drain To Source Breakdown Voltage

75V

Montaj

Surface Mount

Power Dissipation

80W

Terminal Sayısı

5

Transistor Element Material

SILICON

Gate To Source Voltage Vgs

20V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Radyasyon Dayanımı

No

Temel Parça No

STL80

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Pozisyonu

DUAL

Transistor Application

SWITCHING

Montaj Tipi

Surface Mount

Vgsth Max Id

4V @ 250μA

Vgs Max

±20V

RoHS Durumu

ROHS3 Compliant

Seri

DeepGATE™, STripFET™ VI

Drive Voltage Max Rds On Min Rds On

10V

ECCN Kodu

EAR99

Ambalaj

Tape & Reel (TR)

Direnç

6.3MOhm

Pin Sayısı

8

Kurşunsuz

Lead Free

Power Dissipation Max

80W Tc

Rds On Max Id Vgs

6.3m Ω @ 9A, 10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Parça Durumu

Obsolete

Jesd30 Code

R-PDSO-N5

Input Capacitance Ciss Max Vds

7120pF @ 25V

Kılıf / Paket

8-PowerVDFN

Fet Type

N-Channel

Case Connection

DRAIN

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

80A

Pulsed Drain Currentmax Idm

74A

Current Continuous Drain Id25

80A Tc

Pin Sayısı

8

Number Of Elements

1

Gate Charge Qg Max Vgs

100nC @ 10V