STL56N3LLH5

Teknik Özellikler

Vgsth Max Id

1V @ 250μA

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

56A Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tape & Reel (TR)

Power Dissipation Max

62.5W Tc

Element Configuration

Single

Vgs Max

+22V, -20V

Turn On Delay Time

10.8 ns

Rds On Max Id Vgs

9m Ω @ 7.5A, 10V

Transistor Application

SWITCHING

Kurşunsuz

Lead Free

Parça Durumu

Active

Drain Currentmax Abs Id

15A

Radyasyon Dayanımı

No

Terminal Formu

FLAT

Fabrika Tedarik Süresi

14 Weeks

Gate Charge Qg Max Vgs

6.5nC @ 4.5V

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

JESD-609 Kodu

e3

Fet Type

N-Channel

ECCN Kodu

EAR99

Montaj

Surface Mount

Pulsed Drain Currentmax Idm

60A

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Terminal Sayısı

5

Terminal Kaplaması

Matte Tin (Sn) - annealed

Tepe Reflow Süresi (maks. sn)

30

Turn Off Delay Time

14.2 ns

Montaj Tipi

Surface Mount

Jesd30 Code

R-PDSO-F5

Pin Sayısı

8

Input Capacitance Ciss Max Vds

950pF @ 25V

Transistor Element Material

SILICON

Terminal Pozisyonu

DUAL

Seri

STripFET™ V

Çalışma Sıcaklığı

-55°C~150°C TJ

Continuous Drain Current Id

56A

Kılıf / Paket

8-PowerVDFN

Gate To Source Voltage Vgs

20V