STL11N65M5

Teknik Özellikler

Vgsth Max Id

5V @ 250μA

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Pin Sayısı

8

Jesd30 Code

S-XQFP-F5

Transistor Element Material

SILICON

Current Continuous Drain Id25

8.5A Tc

Input Capacitance Ciss Max Vds

644pF @ 100V

RoHS Durumu

ROHS3 Compliant

Montaj Tipi

Surface Mount

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

70W Tc

Ambalaj

Tape & Reel (TR)

Vgs Max

±25V

Terminal Pozisyonu

QUAD

Avalanche Energy Rating Eas

130 mJ

Transistor Application

SWITCHING

Rds On Max Id Vgs

530m Ω @ 4.25A, 10V

Seri

MDmesh™

Çalışma Sıcaklığı

-55°C~150°C TJ

Configuration

SINGLE WITH BUILT-IN DIODE

Kurşunsuz

Lead Free

Parça Durumu

Active

Continuous Drain Current Id

8.5A

Drain To Source Voltage Vdss

650V

Kılıf / Paket

8-PowerVDFN

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

12 Weeks

Gate Charge Qg Max Vgs

17nC @ 10V

Terminal Formu

FLAT

Case Connection

DRAIN

Fet Type

N-Channel

ECCN Kodu

EAR99

Drainsource On Resistancemax

0.53Ohm

Ds Breakdown Voltagemin

650V

Number Of Elements

1

Montaj

Surface Mount

Temel Parça No

STL11

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pulsed Drain Currentmax Idm

34A

Drive Voltage Max Rds On Min Rds On

10V