STL11N3LLH6

Teknik Özellikler

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

2W Ta 50W Tc

Element Configuration

Single

Ambalaj

Tape & Reel (TR)

Vgs Max

±20V

Terminal Pozisyonu

DUAL

Transistor Application

SWITCHING

Çalışma Sıcaklığı

-55°C~150°C TJ

Seri

DeepGATE™, STripFET™ VI

Rds On Max Id Vgs

7.5m Ω @ 5.5A, 10V

Vgsth Max Id

1V @ 250μA (Min)

Input Capacitance Ciss Max Vds

1690pF @ 24V

Current Continuous Drain Id25

11A Tc

Transistor Element Material

SILICON

Pin Sayısı

8

Montaj Tipi

Surface Mount

RoHS Durumu

ROHS3 Compliant

Montaj

Surface Mount

Number Of Elements

1

Temel Parça No

STL11

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Terminal Sayısı

8

Pulsed Drain Currentmax Idm

44A

Additional Feature

ULTRA-LOW RESISTANCE

Pin Sayısı

8

Radyasyon Dayanımı

No

Parça Durumu

Active

Kurşunsuz

Lead Free

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

11A

Gate To Source Voltage Vgs

20V

Kılıf / Paket

8-PowerVDFN

Gate Charge Qg Max Vgs

17nC @ 4.5V

Power Dissipation

50W

Fabrika Tedarik Süresi

20 Weeks

Case Connection

DRAIN

ECCN Kodu

EAR99

Fet Type

N-Channel

Direnç

7.5MOhm

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)