STI57N65M5

Teknik Özellikler

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgsth Max Id

5V @ 250μA

Transistor Element Material

SILICON

Terminal Sayısı

3

Case Connection

DRAIN

Montaj

Through Hole

Continuous Drain Current Id

42A

Turn On Delay Time

73 ns

Yükseklik

9.35mm

Input Capacitance Ciss Max Vds

4200pF @ 100V

Element Configuration

Single

Avalanche Energy Rating Eas

960 mJ

Turn Off Delay Time

19 ns

Montaj Tipi

Through Hole

Rds On Max Id Vgs

63m Ω @ 21A, 10V

Rise Time

15ns

Number Of Elements

1

Pulsed Drain Currentmax Idm

168A

Parça Durumu

Active

Gate To Source Voltage Vgs

25V

Pin Sayısı

3

Fall Time Typ

12 ns

Drive Voltage Max Rds On Min Rds On

10V

Vgs Max

±25V

Gate Charge Qg Max Vgs

98nC @ 10V

Power Dissipation

250W

Temel Parça No

STI57N

Current Continuous Drain Id25

42A Tc

ECCN Kodu

EAR99

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Transistor Application

SWITCHING

Uzunluk

10.4mm

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fabrika Tedarik Süresi

17 Weeks

Genişlik

4.6mm

Operating Mode

ENHANCEMENT MODE

Drain To Source Breakdown Voltage

650V