STI270N4F3

Teknik Özellikler

Fet Type

N-Channel

Vgsth Max Id

4V @ 250μA

Montaj

Through Hole

Operating Mode

ENHANCEMENT MODE

Turn Off Delay Time

110 ns

Threshold Voltage

4V

Power Dissipation

330W

Transistor Element Material

SILICON

Ambalaj

Tube

Temel Parça No

STI270N

Genişlik

4.6mm

Yükseklik

10.75mm

Gate To Source Voltage Vgs

20V

Pin Sayısı

3

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~175°C TJ

Drainsource On Resistancemax

0.0026Ohm

Fall Time Typ

45 ns

ECCN Kodu

EAR99

Uzunluk

10.4mm

Pin Sayısı

4

Gate Charge Qg Max Vgs

150nC @ 10V

Seri

Automotive, AEC-Q101, STripFET™ III

Montaj Tipi

Through Hole

Rise Time

180ns

Parça Durumu

Active

Terminal Sayısı

3

Drain To Source Breakdown Voltage

40V

Turn On Delay Time

22 ns

Element Configuration

Single

Vgs Max

±20V

Reach Svhc

No SVHC

Number Of Elements

1

Power Dissipation Max

330W Tc

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Fabrika Tedarik Süresi

12 Weeks

Current Continuous Drain Id25

160A Tc

Case Connection

DRAIN