STI24NM60N

Teknik Özellikler

Yükseklik

10.75mm

Ambalaj

Tube

Genişlik

4.6mm

Temel Parça No

STI24N

Lifecycle Status

NRND (Last Updated: 7 months ago)

Gate To Source Voltage Vgs

30V

Drain To Source Voltage Vdss

600V

Pin Sayısı

3

Ds Breakdown Voltagemin

600V

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Fall Time Typ

37 ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgsth Max Id

4V @ 250μA

Fet Type

N-Channel

Threshold Voltage

3V

Montaj

Through Hole

Turn Off Delay Time

73 ns

Operating Mode

ENHANCEMENT MODE

Power Dissipation

125W

Terminal Pozisyonu

SINGLE

Transistor Element Material

SILICON

Drive Voltage Max Rds On Min Rds On

10V

Case Connection

DRAIN

Current Continuous Drain Id25

17A Tc

Transistor Application

SWITCHING

Continuous Drain Current Id

17A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

190m Ω @ 8A, 10V

Input Capacitance Ciss Max Vds

1400pF @ 50V

Pulsed Drain Currentmax Idm

68A

Uzunluk

10.4mm

ECCN Kodu

EAR99

Gate Charge Qg Max Vgs

46nC @ 10V

Pin Sayısı

3

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Through Hole

Rise Time

16.5ns

Kurşunsuz

Lead Free

Parça Durumu

Active