STI13NM60N

Teknik Özellikler

Transistor Application

SWITCHING

Continuous Drain Current Id

11A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

360m Ω @ 5.5A, 10V

Input Capacitance Ciss Max Vds

790pF @ 50V

Pulsed Drain Currentmax Idm

44A

Fabrika Tedarik Süresi

16 Weeks

Drive Voltage Max Rds On Min Rds On

10V

Current Continuous Drain Id25

11A Tc

Case Connection

DRAIN

Turn On Delay Time

3 ns

Drain To Source Breakdown Voltage

600V

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Power Dissipation Max

90W Tc

Number Of Elements

1

Element Configuration

Single

Vgs Max

±25V

Reach Svhc

No SVHC

Uzunluk

10.4mm

ECCN Kodu

EAR99

Gate Charge Qg Max Vgs

30nC @ 10V

Rise Time

8ns

Montaj Tipi

Through Hole

Kurşunsuz

Lead Free

Parça Durumu

Active

Terminal Sayısı

3

Seri

MDmesh™ II

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Fall Time Typ

10 ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Yükseklik

10.75mm

Ambalaj

Tube

Genişlik

4.6mm

Temel Parça No

STI13N

Avalanche Energy Rating Eas

200 mJ

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Gate To Source Voltage Vgs

25V

Pin Sayısı

3

Power Dissipation

90W