STH3N150-2

Teknik Özellikler

Vgsth Max Id

5V @ 250μA

Turn Off Delay Time

45 ns

Threshold Voltage

4V

Power Dissipation

140W

Genişlik

15.8mm

Ambalaj

Cut Tape (CT)

Number Of Channels

1

Yükseklik

5mm

Drain To Source Voltage Vdss

1500V

Gate To Source Voltage Vgs

30V

Avalanche Energy Rating Eas

450 mJ

RoHS Durumu

ROHS3 Compliant

Drainsource On Resistancemax

9Ohm

Çalışma Sıcaklığı

150°C TJ

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

29.3nC @ 10V

Uzunluk

10.4mm

ECCN Kodu

EAR99

Terminal Sayısı

2

Rise Time

47ns

Montaj Tipi

Surface Mount

Max Junction Temperature Tj

150°C

Drain To Source Breakdown Voltage

1.5kV

Reach Svhc

No SVHC

Number Of Elements

1

Power Dissipation Max

140W Tc

Vgs Max

±30V

JESD-609 Kodu

e3

Element Configuration

Single

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab) Variant

Drive Voltage Max Rds On Min Rds On

10V

Continuous Drain Current Id

2.5A

Input Capacitance Ciss Max Vds

939pF @ 25V

Fet Type

N-Channel

Contact Plating

Tin

Operating Mode

ENHANCEMENT MODE

Montaj

Surface Mount

Transistor Element Material

SILICON

Temel Parça No

STH3N

Pin Sayısı

3