STH12N120K5-2

Teknik Özellikler

Configuration

SINGLE WITH BUILT-IN DIODE

Parça Durumu

Active

Seri

MDmesh™ K5

Turn On Delay Time

23 ns

Fabrika Tedarik Süresi

26 Weeks

Jesd30 Code

R-PSSO-G2

Case Connection

DRAIN

Current Continuous Drain Id25

12A Tc

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

690m Ω @ 6A, 10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Manufacturer Package Identifier

H2PAK-2-8159712

Contact Plating

Tin

Fet Type

N-Channel

Montaj

Surface Mount

Operating Mode

ENHANCEMENT MODE

REACH Uyumluluk Kodu

not_compliant

Transistor Element Material

SILICON

Terminal Pozisyonu

SINGLE

Temel Parça No

STH12N

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Fall Time Typ

18.5 ns

ECCN Kodu

EAR99

Gate Charge Qg Max Vgs

44.2nC @ 10V

Terminal Formu

GULL WING

Montaj Tipi

Surface Mount

Rise Time

11ns

Terminal Sayısı

2

Max Junction Temperature Tj

150°C

Drain To Source Breakdown Voltage

1.2kV

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number Of Elements

1

Power Dissipation Max

250W Tc

Vgs Max

±30V

JESD-609 Kodu

e3

Drive Voltage Max Rds On Min Rds On

10V

Continuous Drain Current Id

12A

Pulsed Drain Currentmax Idm

48A

Input Capacitance Ciss Max Vds

1370pF @ 100V