STFW12N120K5

Teknik Özellikler

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Vgsth Max Id

5V @ 100μA

Terminal Sayısı

3

Pin Sayısı

3

Parça Durumu

Active

Seri

MDmesh™ K5

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Fet Type

N-Channel

Jesd30 Code

R-PSFM-T3

Ds Breakdown Voltagemin

1200V

Drainsource On Resistancemax

0.69Ohm

Ambalaj

Tube

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Montaj Tipi

Through Hole

Temel Parça No

STFW

Vgs Max

±30V

Kılıf / Paket

ISOWATT218FX

Transistor Application

SWITCHING

Fabrika Tedarik Süresi

12 Weeks

Number Of Elements

1

Current Continuous Drain Id25

12A Tc

Power Dissipation Max

63W Tc

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

Yüzey Montaj

NO

Terminal Pozisyonu

SINGLE

Rds On Max Id Vgs

690m Ω @ 6A, 10V

Configuration

SINGLE WITH BUILT-IN DIODE

Drive Voltage Max Rds On Min Rds On

10V

Pulsed Drain Currentmax Idm

48A

Gate Charge Qg Max Vgs

44.2nC @ 10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drain Currentmax Abs Id

12A

Drain To Source Voltage Vdss

1200V

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~150°C TJ

Input Capacitance Ciss Max Vds

1370pF @ 100V