STF5N52U

Teknik Özellikler

Rds On Max Id Vgs

1.5 Ω @ 2.2A, 10V

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Ambalaj

Tube

Turn Off Delay Time

23.1 ns

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

525V

Rise Time

13.6ns

Operating Mode

ENHANCEMENT MODE

Terminal Pozisyonu

SINGLE

Case Connection

ISOLATED

Pin Sayısı

3

Temel Parça No

STF5N

Continuous Drain Current Id

4.4A

Number Of Elements

1

ECCN Kodu

EAR99

Terminal Kaplaması

Matte Tin (Sn) - annealed

Input Capacitance Ciss Max Vds

529pF @ 25V

Çalışma Sıcaklığı

-55°C~150°C TJ

Radyasyon Dayanımı

No

Kılıf / Paket

TO-220-3 Full Pack

Seri

UltraFASTmesh™

JESD-609 Kodu

e3

Transistor Element Material

SILICON

Fall Time Typ

15 ns

Current Continuous Drain Id25

4.4A Tc

Power Dissipation Max

25W Tc

Vgs Max

±30V

Fet Type

N-Channel

Jedec95 Code

TO-220AB

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Gate Charge Qg Max Vgs

16.9nC @ 10V

Vgsth Max Id

4.5V @ 50μA

Drain To Source Voltage Vdss

525V

Montaj Tipi

Through Hole

Configuration

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time

11.4 ns

Power Dissipation

25W