STF57N65M5

Teknik Özellikler

Seri

MDmesh™ V

Radyasyon Dayanımı

No

Kılıf / Paket

TO-220-3 Full Pack

Çalışma Sıcaklığı

-55°C~150°C TJ

Fabrika Tedarik Süresi

17 Weeks

Input Capacitance Ciss Max Vds

4200pF @ 100V

Jedec95 Code

TO-220AB

Fet Type

N-Channel

Current Continuous Drain Id25

42A Tc

Power Dissipation Max

40W Tc

Vgs Max

±25V

Fall Time Typ

19 ns

Transistor Element Material

SILICON

Montaj Tipi

Through Hole

Turn On Delay Time

73 ns

Power Dissipation

40W

Gate Charge Qg Max Vgs

98nC @ 10V

Vgsth Max Id

5V @ 250μA

Avalanche Energy Rating Eas

960 mJ

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Yükseklik

16.4mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Direnç

63mOhm

RoHS Durumu

ROHS3 Compliant

Genişlik

4.6mm

Parça Durumu

Active

Gate To Source Voltage Vgs

25V

Montaj

Through Hole

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

3

Rds On Max Id Vgs

63m Ω @ 21A, 10V

Drain To Source Breakdown Voltage

650V

Rise Time

15ns

Transistor Application

SWITCHING

Turn Off Delay Time

12 ns

Ambalaj

Tube

Kurşunsuz

Lead Free

Element Configuration

Single

Pin Sayısı

3

Case Connection

ISOLATED