STF4N80K5

Teknik Özellikler

Fall Time Typ

21 ns

Transistor Element Material

SILICON

Number Of Channels

1

Jedec95 Code

TO-220AB

Fet Type

N-Channel

Current Continuous Drain Id25

3A Tc

Vgs Max

±30V

Power Dissipation Max

20W Tc

Çalışma Sıcaklığı

-55°C~150°C TJ

Fabrika Tedarik Süresi

17 Weeks

Input Capacitance Ciss Max Vds

175pF @ 100V

Seri

SuperMESH5™

Radyasyon Dayanımı

No

Kılıf / Paket

TO-220-3 Full Pack

Gate To Source Voltage Vgs

30V

Montaj

Through Hole

Genişlik

4.6mm

Parça Durumu

Active

Gate Charge Qg Max Vgs

10.5nC @ 10V

Vgsth Max Id

5V @ 100μA

Avalanche Energy Rating Eas

74.5 mJ

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Yükseklik

16.4mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

RoHS Durumu

ROHS3 Compliant

Direnç

2.5Ohm

Turn On Delay Time

16.5 ns

Montaj Tipi

Through Hole

Drain To Source Voltage Vdss

800V

Ambalaj

Tube

Turn Off Delay Time

36 ns

Kurşunsuz

Lead Free

Element Configuration

Single

Rise Time

15ns

Ds Breakdown Voltagemin

800V

Transistor Application

SWITCHING

Rds On Max Id Vgs

2.5 Ω @ 1.5A, 10V

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

3

Temel Parça No

STF4N