STF4N62K3

Teknik Özellikler

Radyasyon Dayanımı

No

Reach Svhc

No SVHC

Çalışma Sıcaklığı

150°C TJ

Threshold Voltage

3.75V

Jedec95 Code

TO-220AB

Vgs Max

±30V

Power Dissipation Max

25W Tc

Transistor Element Material

SILICON

Power Dissipation

25W

Vgsth Max Id

4.5V @ 50μA

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

3

Yükseklik

16.4mm

Parça Durumu

Active

Gate To Source Voltage Vgs

30V

Rds On Max Id Vgs

2 Ω @ 1.9A, 10V

Rise Time

9ns

Transistor Application

SWITCHING

Ambalaj

Tube

Element Configuration

Single

Kurşunsuz

Lead Free

Pulsed Drain Currentmax Idm

15.2A

Operating Mode

ENHANCEMENT MODE

Uzunluk

10.4mm

Terminal Kaplaması

Matte Tin (Sn) - annealed

ECCN Kodu

EAR99

Seri

SuperMESH3™

Kılıf / Paket

TO-220-3 Full Pack

Fabrika Tedarik Süresi

12 Weeks

Input Capacitance Ciss Max Vds

550pF @ 50V

Fet Type

N-Channel

Current Continuous Drain Id25

3.8A Tc

Fall Time Typ

19 ns

JESD-609 Kodu

e3

Montaj Tipi

Through Hole

Turn On Delay Time

10 ns

Gate Charge Qg Max Vgs

22nC @ 10V

Direnç

2Ohm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)