STF34NM60ND

Teknik Özellikler

Vgsth Max Id

5V @ 250μA

Yükseklik

16.4mm

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Power Dissipation

190W

Additional Feature

ULTRA-LOW RESISTANCE

Drain To Source Voltage Vdss

600V

Gate To Source Voltage Vgs

25V

Parça Durumu

Active

Çalışma Sıcaklığı

150°C TJ

Reach Svhc

No SVHC

Threshold Voltage

4V

Radyasyon Dayanımı

No

Transistor Element Material

SILICON

Jedec95 Code

TO-220AB

Vgs Max

±25V

Power Dissipation Max

40W Tc

Uzunluk

10.4mm

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

116A

ECCN Kodu

EAR99

Terminal Kaplaması

Matte Tin (Sn) - annealed

Rds On Max Id Vgs

110m Ω @ 14.5A, 10V

Ambalaj

Tube

Kurşunsuz

Lead Free

Element Configuration

Single

Rise Time

53.4ns

Transistor Application

SWITCHING

Gate Charge Qg Max Vgs

80.4nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Direnç

105MOhm

Montaj Tipi

Through Hole

Turn On Delay Time

30 ns

Montaj

Through Hole

Genişlik

4.6mm

Fabrika Tedarik Süresi

16 Weeks

Input Capacitance Ciss Max Vds

2785pF @ 50V

Seri

FDmesh™ II

Kılıf / Paket

TO-220-3 Full Pack

Fall Time Typ

61.8 ns