STF25N80K5

Teknik Özellikler

Parça Durumu

Active

Gate To Source Voltage Vgs

30V

Power Dissipation

40W

RoHS Durumu

ROHS3 Compliant

Yükseklik

16.4mm

Vgsth Max Id

5V @ 100μA

Power Dissipation Max

40W Tc

Vgs Max

±30V

Jedec95 Code

TO-220AB

Transistor Element Material

SILICON

Radyasyon Dayanımı

No

Çalışma Sıcaklığı

-55°C~150°C TJ

ECCN Kodu

EAR99

Terminal Kaplaması

Matte Tin (Sn) - annealed

Pulsed Drain Currentmax Idm

78A

Uzunluk

10.6mm

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Rise Time

13ns

Element Configuration

Single

Kurşunsuz

Lead Free

Ambalaj

Tube

Rds On Max Id Vgs

260m Ω @ 19.5A, 10V

Genişlik

4.6mm

Montaj

Through Hole

Turn On Delay Time

25 ns

Montaj Tipi

Through Hole

Avalanche Energy Rating Eas

200 mJ

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

40nC @ 10V

Current Continuous Drain Id25

19.5A Tc

Fet Type

N-Channel

JESD-609 Kodu

e3

Fall Time Typ

15 ns

Kılıf / Paket

TO-220-3 Full Pack

Seri

SuperMESH5™

Input Capacitance Ciss Max Vds

1600pF @ 100V

Fabrika Tedarik Süresi

17 Weeks

Number Of Elements

1