STF19NM50N

Teknik Özellikler

Radyasyon Dayanımı

No

Reach Svhc

No SVHC

Çalışma Sıcaklığı

150°C TJ

Threshold Voltage

3V

Jedec95 Code

TO-220AB

Power Dissipation Max

30W Tc

Vgs Max

±25V

Transistor Element Material

SILICON

Power Dissipation

30W

Vgsth Max Id

4V @ 250μA

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

3

Yükseklik

16.4mm

Parça Durumu

Active

Gate To Source Voltage Vgs

25V

Rds On Max Id Vgs

250m Ω @ 7A, 10V

Rise Time

16ns

Transistor Application

SWITCHING

Ambalaj

Tube

Element Configuration

Single

Kurşunsuz

Lead Free

Pulsed Drain Currentmax Idm

56A

Operating Mode

ENHANCEMENT MODE

Uzunluk

10.4mm

Terminal Kaplaması

Matte Tin (Sn) - annealed

ECCN Kodu

EAR99

Seri

MDmesh™ II

Kılıf / Paket

TO-220-3 Full Pack

Fabrika Tedarik Süresi

16 Weeks

Input Capacitance Ciss Max Vds

1000pF @ 50V

Fet Type

N-Channel

Current Continuous Drain Id25

14A Tc

Fall Time Typ

17 ns

JESD-609 Kodu

e3

Montaj Tipi

Through Hole

Turn On Delay Time

12 ns

Gate Charge Qg Max Vgs

34nC @ 10V

Direnç

250MOhm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Avalanche Energy Rating Eas

208 mJ