STF16N65M2

Teknik Özellikler

Rds On Max Id Vgs

360m Ω @ 5.5A, 10V

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Ambalaj

Tube

Kurşunsuz

Lead Free

Ds Breakdown Voltagemin

650V

Transistor Application

SWITCHING

Case Connection

ISOLATED

Operating Mode

ENHANCEMENT MODE

Terminal Pozisyonu

SINGLE

Pulsed Drain Currentmax Idm

44A

Jesd30 Code

R-PSFM-T3

Temel Parça No

STF16

Continuous Drain Current Id

11A

ECCN Kodu

EAR99

Drainsource On Resistancemax

0.36Ohm

Number Of Elements

1

Çalışma Sıcaklığı

-55°C~150°C TJ

Fabrika Tedarik Süresi

16 Weeks

Input Capacitance Ciss Max Vds

718pF @ 100V

Seri

MDmesh™ M2

Kılıf / Paket

TO-220-3 Full Pack

Transistor Element Material

SILICON

Fet Type

N-Channel

Jedec95 Code

TO-220AB

Vgs Max

±25V

Power Dissipation Max

25W Tc

Current Continuous Drain Id25

11A Tc

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Gate Charge Qg Max Vgs

19.5nC @ 10V

Vgsth Max Id

4V @ 250μA

Avalanche Energy Rating Eas

360 mJ

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Nem Hassasiyeti (MSL)

1 (Unlimited)

RoHS Durumu

ROHS3 Compliant

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Through Hole

Drain To Source Voltage Vdss

650V

Montaj

Through Hole