STF15N65M5

Teknik Özellikler

Jedec95 Code

TO-220AB

Fet Type

N-Channel

Current Continuous Drain Id25

11A Tc

Power Dissipation Max

30W Tc

Vgs Max

±25V

Transistor Element Material

SILICON

Seri

MDmesh™ V

Radyasyon Dayanımı

No

Kılıf / Paket

TO-220-3 Full Pack

Çalışma Sıcaklığı

150°C TJ

Fabrika Tedarik Süresi

17 Weeks

Input Capacitance Ciss Max Vds

816pF @ 100V

Genişlik

4.6mm

Parça Durumu

Active

Gate To Source Voltage Vgs

25V

Montaj

Through Hole

Turn On Delay Time

30 ns

Montaj Tipi

Through Hole

Power Dissipation

25W

Gate Charge Qg Max Vgs

22nC @ 10V

Vgsth Max Id

5V @ 250μA

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Yükseklik

16.4mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

RoHS Durumu

ROHS3 Compliant

Direnç

340MOhm

Transistor Application

SWITCHING

Turn Off Delay Time

30 ns

Ambalaj

Tube

Kurşunsuz

Lead Free

Element Configuration

Single

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

3

Rds On Max Id Vgs

340m Ω @ 5.5A, 10V

Drain To Source Breakdown Voltage

650V

ECCN Kodu

EAR99

Number Of Elements

1

Continuous Drain Current Id

11A

Temel Parça No

STF15

Pulsed Drain Currentmax Idm

44A