STF13NM60N

Teknik Özellikler

Power Dissipation

25W

Vgsth Max Id

4V @ 250μA

Yükseklik

20mm

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Parça Durumu

Active

Gate To Source Voltage Vgs

25V

Radyasyon Dayanımı

No

Çalışma Sıcaklığı

-55°C~150°C TJ

Reach Svhc

No SVHC

Jedec95 Code

TO-220AB

Vgs Max

±25V

Power Dissipation Max

25W Tc

Manufacturer Package Identifier

TO-220FP-7012510

Transistor Element Material

SILICON

Pulsed Drain Currentmax Idm

44A

Operating Mode

ENHANCEMENT MODE

Uzunluk

10.4mm

Terminal Kaplaması

Matte Tin (Sn) - annealed

ECCN Kodu

EAR99

Rds On Max Id Vgs

360m Ω @ 5.5A, 10V

Rise Time

8ns

Transistor Application

SWITCHING

Ambalaj

Tube

Kurşunsuz

Lead Free

Element Configuration

Single

Montaj Tipi

Through Hole

Turn On Delay Time

3 ns

Gate Charge Qg Max Vgs

30nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Avalanche Energy Rating Eas

200 mJ

Direnç

280mOhm

Genişlik

4.6mm

Nominal Vgs

3 V

Montaj

Through Hole

Seri

MDmesh™ II

Kılıf / Paket

TO-220-3 Full Pack

Max Junction Temperature Tj

150°C

Fabrika Tedarik Süresi

16 Weeks