STF12NM60N

Teknik Özellikler

Vgsth Max Id

4V @ 250μA

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Power Dissipation

25W

Gate To Source Voltage Vgs

25V

Parça Durumu

Obsolete

Reach Svhc

No SVHC

Çalışma Sıcaklığı

-55°C~150°C TJ

Threshold Voltage

3V

Transistor Element Material

SILICON

Jedec95 Code

TO-220AB

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Power Dissipation Max

25W Tc

Vgs Max

±25V

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

40A

ECCN Kodu

EAR99

Terminal Kaplaması

Matte Tin (Sn)

Rds On Max Id Vgs

410m Ω @ 5A, 10V

Terminal

Through Hole

Ambalaj

Tube

Element Configuration

Single

Kurşunsuz

Lead Free

Rise Time

9ns

Transistor Application

SWITCHING

Gate Charge Qg Max Vgs

30.5nC @ 10V

Direnç

410mOhm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Avalanche Energy Rating Eas

200 mJ

Montaj Tipi

Through Hole

Montaj

Through Hole

Nominal Vgs

3 V

Dual Supply Voltage

600V

Input Capacitance Ciss Max Vds

960pF @ 50V

Seri

MDmesh™ II

Kılıf / Paket

TO-220-3 Full Pack

Fall Time Typ

10 ns

JESD-609 Kodu

e3

Fet Type

N-Channel

Current Continuous Drain Id25

10A Tc