STF11NM60ND

Teknik Özellikler

Vgsth Max Id

5V @ 250μA

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Yükseklik

16.4mm

Power Dissipation

90W

Gate To Source Voltage Vgs

25V

Parça Durumu

Active

Reach Svhc

No SVHC

Çalışma Sıcaklığı

-55°C~150°C TJ

Threshold Voltage

4V

Radyasyon Dayanımı

No

Transistor Element Material

SILICON

Jedec95 Code

TO-220AB

Power Dissipation Max

25W Tc

Vgs Max

±25V

Uzunluk

10.4mm

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

40A

ECCN Kodu

EAR99

Rds On Max Id Vgs

450m Ω @ 5A, 10V

Ambalaj

Tube

Element Configuration

Single

Rise Time

7ns

Transistor Application

SWITCHING

Gate Charge Qg Max Vgs

30nC @ 10V

Avalanche Energy Rating Eas

200 mJ

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Through Hole

Turn On Delay Time

16 ns

Montaj

Through Hole

Genişlik

4.6mm

Fabrika Tedarik Süresi

16 Weeks

Input Capacitance Ciss Max Vds

850pF @ 50V

Seri

FDmesh™ II

Kılıf / Paket

TO-220-3 Full Pack

Fall Time Typ

9 ns

Fet Type

N-Channel

Current Continuous Drain Id25

10A Tc

Case Connection

ISOLATED