STF11NM50N

Teknik Özellikler

Threshold Voltage

3V

Çalışma Sıcaklığı

150°C TJ

Reach Svhc

No SVHC

Radyasyon Dayanımı

No

Transistor Element Material

SILICON

Power Dissipation Max

25W Tc

Vgs Max

±25V

Jedec95 Code

TO-220AB

Yükseklik

16.4mm

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

3

Vgsth Max Id

4V @ 250μA

Power Dissipation

25W

Gate To Source Voltage Vgs

25V

Parça Durumu

Active

Rds On Max Id Vgs

470m Ω @ 4.5A, 10V

Kurşunsuz

Lead Free

Element Configuration

Single

Ambalaj

Tube

Transistor Application

SWITCHING

Rise Time

10ns

Uzunluk

10.4mm

Operating Mode

ENHANCEMENT MODE

Terminal Kaplaması

Matte Tin (Sn) - annealed

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

547pF @ 50V

Fabrika Tedarik Süresi

16 Weeks

Kılıf / Paket

TO-220-3 Full Pack

Seri

MDmesh™ II

JESD-609 Kodu

e3

Fall Time Typ

10 ns

Current Continuous Drain Id25

8.5A Tc

Fet Type

N-Channel

Nem Hassasiyeti (MSL)

1 (Unlimited)

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Direnç

470MOhm

Gate Charge Qg Max Vgs

19nC @ 10V

Montaj Tipi

Through Hole

Turn On Delay Time

8 ns

Montaj

Through Hole