STF11N52K3

Teknik Özellikler

Seri

SuperMESH3™

Kılıf / Paket

TO-220-3 Full Pack

Radyasyon Dayanımı

No

Reach Svhc

No SVHC

Çalışma Sıcaklığı

-55°C~150°C TJ

Input Capacitance Ciss Max Vds

1400pF @ 50V

Threshold Voltage

3.75V

Fet Type

N-Channel

Jedec95 Code

TO-220AB

Vgs Max

±30V

Power Dissipation Max

30W Tc

Current Continuous Drain Id25

10A Tc

Fall Time Typ

42 ns

Transistor Element Material

SILICON

Power Dissipation

30W

Montaj Tipi

Through Hole

Turn On Delay Time

7 ns

Additional Feature

ULTRA-LOW RESISTANCE

Vgsth Max Id

4.5V @ 50μA

Gate Charge Qg Max Vgs

51nC @ 10V

Direnç

510MOhm

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yükseklik

16.4mm

Avalanche Energy Rating Eas

170 mJ

Parça Durumu

Obsolete

Genişlik

4.6mm

Gate To Source Voltage Vgs

30V

Montaj

Through Hole

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

3

Drain To Source Breakdown Voltage

525V

Rds On Max Id Vgs

510m Ω @ 5A, 10V

Rise Time

18ns

Transistor Application

SWITCHING

Ambalaj

Tube

Turn Off Delay Time

281 ns

Element Configuration

Single

Kurşunsuz

Lead Free