STF10P6F6

Teknik Özellikler

Parça Durumu

Obsolete

Montaj

Through Hole

Gate To Source Voltage Vgs

20V

Montaj Tipi

Through Hole

Turn On Delay Time

64 ns

Power Dissipation

20W

Gate Charge Qg Max Vgs

6.4nC @ 10V

Vgsth Max Id

4V @ 250μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Lifecycle Status

NRND (Last Updated: 8 months ago)

Avalanche Energy Rating Eas

80 mJ

RoHS Durumu

ROHS3 Compliant

Fet Type

P-Channel

Jedec95 Code

TO-251

Power Dissipation Max

20W Tc

Vgs Max

±20V

Current Continuous Drain Id25

10A Tc

Fall Time Typ

3.7 ns

Transistor Element Material

SILICON

Seri

DeepGATE™, STripFET™ VI

Radyasyon Dayanımı

No

Kılıf / Paket

TO-220-3 Full Pack

Çalışma Sıcaklığı

150°C TJ

Input Capacitance Ciss Max Vds

340pF @ 48V

ECCN Kodu

EAR99

Drainsource On Resistancemax

0.16Ohm

Number Of Elements

1

Temel Parça No

STF10P

Continuous Drain Current Id

10A

Pulsed Drain Currentmax Idm

40A

Pin Sayısı

3

Drain Currentmax Abs Id

7.2A

Case Connection

DRAIN

Operating Mode

ENHANCEMENT MODE

Rise Time

5.3ns

Transistor Application

SWITCHING

Ambalaj

Tube

Turn Off Delay Time

14 ns

Element Configuration

Single

Drive Voltage Max Rds On Min Rds On

10V