STF10NM60ND

Teknik Özellikler

Seri

FDmesh™ II

Kılıf / Paket

TO-220-3 Full Pack

Fabrika Tedarik Süresi

16 Weeks

Input Capacitance Ciss Max Vds

540pF @ 50V

Fet Type

N-Channel

Current Continuous Drain Id25

8A Tc

Fall Time Typ

9.8 ns

JESD-609 Kodu

e3

Montaj Tipi

Through Hole

Turn On Delay Time

9.2 ns

Gate Charge Qg Max Vgs

19nC @ 10V

Direnç

550MOhm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Genişlik

4.6mm

Montaj

Through Hole

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

3

Drain To Source Breakdown Voltage

650V

Turn Off Delay Time

32 ns

Pin Sayısı

3

Drain Currentmax Abs Id

8A

Case Connection

ISOLATED

Number Of Elements

1

Continuous Drain Current Id

8A

Temel Parça No

STF10N

Radyasyon Dayanımı

No

Reach Svhc

No SVHC

Çalışma Sıcaklığı

-55°C~150°C TJ

Threshold Voltage

4V

Jedec95 Code

TO-220AB

Power Dissipation Max

25W Tc

Vgs Max

±25V

Transistor Element Material

SILICON

Power Dissipation

25W

Drain To Source Voltage Vdss

600V

Vgsth Max Id

4V @ 250μA

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

3

Yükseklik

16.4mm

Parça Durumu

Active