STF10NM50N

Teknik Özellikler

Radyasyon Dayanımı

No

Reach Svhc

No SVHC

Çalışma Sıcaklığı

-55°C~150°C TJ

Threshold Voltage

3V

Jedec95 Code

TO-220AB

Vgs Max

±25V

Power Dissipation Max

25W Tc

Transistor Element Material

SILICON

Power Dissipation

25W

Vgsth Max Id

4V @ 250μA

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

3

Yükseklik

16.4mm

Parça Durumu

Obsolete

Gate To Source Voltage Vgs

25V

Rds On Max Id Vgs

630m Ω @ 3.5A, 10V

Rise Time

4.4ns

Transistor Application

SWITCHING

Ambalaj

Tube

Element Configuration

Single

Kurşunsuz

Lead Free

Pulsed Drain Currentmax Idm

28A

Uzunluk

10.4mm

Operating Mode

ENHANCEMENT MODE

Terminal Kaplaması

Matte Tin (Sn) - annealed

ECCN Kodu

EAR99

Seri

MDmesh™ II

Kılıf / Paket

TO-220-3 Full Pack

Input Capacitance Ciss Max Vds

450pF @ 50V

Fet Type

N-Channel

Current Continuous Drain Id25

7A Tc

Fall Time Typ

12 ns

JESD-609 Kodu

e3

Turn On Delay Time

7.8 ns

Montaj Tipi

Through Hole

Gate Charge Qg Max Vgs

17nC @ 10V

Direnç

630MOhm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Genişlik

4.6mm

Montaj

Through Hole