STD8NM50N

Teknik Özellikler

Kurşunsuz

Lead Free

Vgsth Max Id

4V @ 250μA

Çalışma Sıcaklığı

150°C TJ

Pulsed Drain Currentmax Idm

20A

Power Dissipation Max

45W Tc

Terminal Pozisyonu

SINGLE

Rds On Max Id Vgs

790m Ω @ 2.5A, 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fabrika Tedarik Süresi

16 Weeks

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Uzunluk

6.6mm

Drain To Source Breakdown Voltage

500V

Reach Svhc

No SVHC

Operating Mode

ENHANCEMENT MODE

Fet Type

N-Channel

Current Continuous Drain Id25

5A Tc

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Element Material

SILICON

Drain Currentmax Abs Id

5A

Ambalaj

Tape & Reel (TR)

Radyasyon Dayanımı

No

Gate Charge Qg Max Vgs

14nC @ 10V

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

3

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

10V

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Number Of Elements

1

Gate To Source Voltage Vgs

25V

Threshold Voltage

3V

Fall Time Typ

8.8 ns

JESD-609 Kodu

e3

Vgs Max

±25V

Pin Sayısı

3

Turn On Delay Time

7 ns

Rise Time

4.4ns

Parça Durumu

Active

Yükseklik

2.4mm

Power Dissipation

45W