STD7NM80-1

Teknik Özellikler

Avalanche Energy Rating Eas

240 mJ

Uzunluk

6.6mm

Montaj Tipi

Through Hole

Fet Type

N-Channel

Reach Svhc

No SVHC

Operating Mode

ENHANCEMENT MODE

Drain To Source Breakdown Voltage

800V

Power Dissipation Max

90W Tc

Çalışma Sıcaklığı

-55°C~150°C TJ

Pulsed Drain Currentmax Idm

26A

Kurşunsuz

Lead Free

Vgsth Max Id

5V @ 250μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

1.05 Ω @ 3.25A, 10V

Case Connection

ISOLATED

Drive Voltage Max Rds On Min Rds On

10V

Transistor Application

SWITCHING

Number Of Elements

1

Lifecycle Status

NRND (Last Updated: 8 months ago)

Current Continuous Drain Id25

6.5A Tc

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Transistor Element Material

SILICON

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Gate Charge Qg Max Vgs

18nC @ 10V

Radyasyon Dayanımı

No

Ambalaj

Tube

Pin Sayısı

3

Vgs Max

±30V

Rise Time

8ns

Parça Durumu

Active

Yükseklik

6.2mm

Turn On Delay Time

20 ns

Element Configuration

Single

Fall Time Typ

10 ns

Gate To Source Voltage Vgs

30V

Threshold Voltage

4V

JESD-609 Kodu

e3

Temel Parça No

STD7

Terminal Sayısı

3