STD7NM80

Teknik Özellikler

Rds On Max Id Vgs

1.05 Ω @ 3.25A, 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Nominal Vgs

4 V

Terminal

SMD/SMT

Vgsth Max Id

5V @ 250μA

Kurşunsuz

Lead Free

Pulsed Drain Currentmax Idm

26A

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipation Max

90W Tc

Drain To Source Breakdown Voltage

800V

Operating Mode

ENHANCEMENT MODE

Reach Svhc

No SVHC

Fet Type

N-Channel

Fabrika Tedarik Süresi

16 Weeks

Montaj Tipi

Surface Mount

Uzunluk

6.6mm

Avalanche Energy Rating Eas

240 mJ

Ambalaj

Tape & Reel (TR)

Radyasyon Dayanımı

No

Gate Charge Qg Max Vgs

18nC @ 10V

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Current Continuous Drain Id25

6.5A Tc

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Number Of Elements

1

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

10V

Case Connection

ISOLATED

JESD-609 Kodu

e3

Dual Supply Voltage

800V

Threshold Voltage

4V

Gate To Source Voltage Vgs

30V

Fall Time Typ

10 ns

Element Configuration

Single

Turn On Delay Time

20 ns

Parça Durumu

Active

Yükseklik

2.4mm

Rise Time

8ns