STD7NM60N

Teknik Özellikler

Pulsed Drain Currentmax Idm

20A

Çalışma Sıcaklığı

150°C TJ

Power Dissipation Max

45W Tc

Kurşunsuz

Lead Free

Vgsth Max Id

4V @ 250μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

900m Ω @ 2.5A, 10V

Uzunluk

6.6mm

Avalanche Energy Rating Eas

119 mJ

Fabrika Tedarik Süresi

16 Weeks

Montaj Tipi

Surface Mount

Operating Mode

ENHANCEMENT MODE

Reach Svhc

No SVHC

Fet Type

N-Channel

Drain To Source Breakdown Voltage

600V

Drain Currentmax Abs Id

5A

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Element Material

SILICON

Current Continuous Drain Id25

5A Tc

Radyasyon Dayanımı

No

Gate Charge Qg Max Vgs

14nC @ 10V

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

3

Ambalaj

Tape & Reel (TR)

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

10V

Number Of Elements

1

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Fall Time Typ

12 ns

Threshold Voltage

3V

Gate To Source Voltage Vgs

25V

Vgs Max

±25V

Pin Sayısı

3

Parça Durumu

Active

Yükseklik

2.4mm

Rise Time

10ns

Element Configuration

Single

Turn On Delay Time

7 ns

Power Dissipation

45W

Direnç

900mOhm