STD70N2LH5

Teknik Özellikler

Rds On Max Id Vgs

7.1m Ω @ 24A, 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate To Source Voltage Vgs

22V

Kurşunsuz

Lead Free

Vgsth Max Id

1V @ 250μA

Çalışma Sıcaklığı

-55°C~175°C TJ

Power Dissipation Max

60W Tc

Element Configuration

Single

Drain To Source Breakdown Voltage

25V

Operating Mode

ENHANCEMENT MODE

Parça Durumu

Obsolete

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Vgs Max

±22V

Pin Sayısı

3

Ambalaj

Tape & Reel (TR)

Seri

STripFET™ V

Radyasyon Dayanımı

No

Gate Charge Qg Max Vgs

8nC @ 5V

ECCN Kodu

EAR99

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Montaj

Surface Mount

Power Dissipation

60W

Current Continuous Drain Id25

48A Tc

Terminal Formu

GULL WING

Transistor Element Material

SILICON

Direnç

7.1MOhm

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Jesd30 Code

R-PSSO-G2

Input Capacitance Ciss Max Vds

1300pF @ 25V

Number Of Elements

1

Continuous Drain Current Id

48A

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

5V 10V

Terminal Sayısı

2

Temel Parça No

STD70N

Case Connection

DRAIN

Kurşunsuz Kodu

yes