STD6N62K3

Teknik Özellikler

Gate Charge Qg Max Vgs

25.7nC @ 10V

Radyasyon Dayanımı

No

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Ambalaj

Tape & Reel (TR)

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Element Material

SILICON

Current Continuous Drain Id25

5.5A Tc

Number Of Elements

1

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

1.28 Ω @ 2.8A, 10V

Pulsed Drain Currentmax Idm

22A

Çalışma Sıcaklığı

150°C TJ

Power Dissipation Max

90W Tc

Kurşunsuz

Lead Free

Vgsth Max Id

4.5V @ 50μA

Operating Mode

ENHANCEMENT MODE

Reach Svhc

No SVHC

Fet Type

N-Channel

Drain To Source Breakdown Voltage

650V

Uzunluk

6.6mm

Fabrika Tedarik Süresi

12 Weeks

Montaj Tipi

Surface Mount

Tepe Reflow Sıcaklığı (°C)

260

Montaj

Surface Mount

ECCN Kodu

EAR99

Terminal Kaplaması

Matte Tin (Sn) - annealed

Seri

SuperMESH3™

Turn Off Delay Time

49 ns

Power Dissipation

90W

Direnç

1.2Ohm

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

706pF @ 50V

Jesd30 Code

R-PSSO-G2

Genişlik

6.2mm

Drain To Source Voltage Vdss

620V

Temel Parça No

STD6N