STD60N55F3

Teknik Özellikler

Rds On Max Id Vgs

8.5m Ω @ 32A, 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

4V @ 250μA

Kurşunsuz

Lead Free

Çalışma Sıcaklığı

-55°C~175°C TJ

Power Dissipation Max

110W Tc

Drain To Source Breakdown Voltage

55V

Operating Mode

ENHANCEMENT MODE

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Uzunluk

6.6mm

Ambalaj

Tape & Reel (TR)

Gate Charge Qg Max Vgs

45nC @ 10V

Radyasyon Dayanımı

No

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

80A Tc

Transistor Element Material

SILICON

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Number Of Elements

1

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

10V

Case Connection

DRAIN

JESD-609 Kodu

e3

Gate To Source Voltage Vgs

20V

Fall Time Typ

11.5 ns

Element Configuration

Single

Turn On Delay Time

20 ns

Rise Time

50ns

Yükseklik

2.4mm

Parça Durumu

Active

Pin Sayısı

3

Vgs Max

±20V

Seri

STripFET™ III

Turn Off Delay Time

35 ns

Tepe Reflow Sıcaklığı (°C)

260

ECCN Kodu

EAR99

Terminal Kaplaması

Matte Tin (Sn) - annealed

Montaj

Surface Mount