STD5NK52ZD-1

Teknik Özellikler

Number Of Elements

1

Input Capacitance Ciss Max Vds

529pF @ 25V

Jesd30 Code

R-PSIP-T3

Continuous Drain Current Id

4.4A

Transistor Application

SWITCHING

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Tepe Reflow Sıcaklığı (°C)

260

Gate Charge Qg Max Vgs

16.9nC @ 10V

Terminal Kaplaması

Matte Tin (Sn) - annealed

ECCN Kodu

EAR99

Montaj

Through Hole

RoHS Durumu

ROHS3 Compliant

Turn Off Delay Time

23.1 ns

Seri

SuperMESH™

Ambalaj

Tube

Power Dissipation

70W

Current Continuous Drain Id25

4.4A Tc

Transistor Element Material

SILICON

Direnç

1.22Ohm

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Rise Time

13.6ns

Parça Durumu

Obsolete

Operating Mode

ENHANCEMENT MODE

Fet Type

N-Channel

Element Configuration

Single

Drain To Source Breakdown Voltage

520V

Avalanche Energy Rating Eas

170 mJ

Pin Sayısı

3

Vgs Max

±30V

Montaj Tipi

Through Hole

Nem Hassasiyeti (MSL)

1 (Unlimited)

REACH Uyumluluk Kodu

not_compliant

Rds On Max Id Vgs

1.5 Ω @ 2.2A, 10V

JESD-609 Kodu

e3

Çalışma Sıcaklığı

-55°C~150°C TJ

Qualification Status

Not Qualified

Pulsed Drain Currentmax Idm

17.6A

Power Dissipation Max

70W Tc