STD5NK40Z-1

Teknik Özellikler

Drain To Source Breakdown Voltage

400V

Reach Svhc

No SVHC

Operating Mode

ENHANCEMENT MODE

Fet Type

N-Channel

Fabrika Tedarik Süresi

12 Weeks

Montaj Tipi

Through Hole

Uzunluk

6.6mm

Rds On Max Id Vgs

1.8 Ω @ 1.5A, 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

4.5V @ 50μA

Kurşunsuz

Lead Free

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipation Max

45W Tc

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Number Of Elements

1

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

10V

Ambalaj

Tube

Radyasyon Dayanımı

No

Gate Charge Qg Max Vgs

17nC @ 10V

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

3A Tc

Transistor Element Material

SILICON

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Drain Currentmax Abs Id

3A

Element Configuration

Single

Turn On Delay Time

9.2 ns

Rise Time

6ns

Yükseklik

6.2mm

Parça Durumu

Active

Pin Sayısı

3

Vgs Max

±30V

JESD-609 Kodu

e3

Gate To Source Voltage Vgs

30V

Threshold Voltage

3.75V

Fall Time Typ

11 ns

Genişlik

2.4mm

Input Capacitance Ciss Max Vds

305pF @ 25V

Continuous Drain Current Id

3A