STD4NK60Z-1

Teknik Özellikler

Radyasyon Dayanımı

No

Gate Charge Qg Max Vgs

26nC @ 10V

Tepe Reflow Sıcaklığı (°C)

260

Tepe Reflow Süresi (maks. sn)

30

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Montaj

Through Hole

ECCN Kodu

EAR99

Terminal Kaplaması

Matte Tin (Sn) - annealed

Ambalaj

Tube

Seri

SuperMESH™

Turn Off Delay Time

29 ns

Drain Currentmax Abs Id

4A

Power Dissipation

70W

Transistor Element Material

SILICON

Direnç

2Ohm

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Current Continuous Drain Id25

4A Tc

Number Of Elements

1

Input Capacitance Ciss Max Vds

510pF @ 25V

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Temel Parça No

STD4N

Transistor Application

SWITCHING

Continuous Drain Current Id

4A

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

JESD-609 Kodu

e3

Rds On Max Id Vgs

2 Ω @ 2A, 10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Fall Time Typ

16.5 ns

Power Dissipation Max

70W Tc

Gate To Source Voltage Vgs

30V

Vgsth Max Id

4.5V @ 50μA

Kurşunsuz

Lead Free

Parça Durumu

Not For New Designs

Operating Mode

ENHANCEMENT MODE

Rise Time

9.5ns

Fet Type

N-Channel

Element Configuration

Single