STD3NK80Z-1

Teknik Özellikler

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

4.5 Ω @ 1.25A, 10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipation Max

70W Tc

Vgsth Max Id

4.5V @ 50μA

Kurşunsuz

Lead Free

Operating Mode

ENHANCEMENT MODE

Reach Svhc

No SVHC

Fet Type

N-Channel

Drain To Source Breakdown Voltage

800V

Uzunluk

6.6mm

Fabrika Tedarik Süresi

12 Weeks

Montaj Tipi

Through Hole

Gate Charge Qg Max Vgs

19nC @ 10V

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

3

Ambalaj

Tube

Drain Currentmax Abs Id

2.5A

Transistor Element Material

SILICON

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Current Continuous Drain Id25

2.5A Tc

Weight

4.535924g

Number Of Elements

1

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

10V

JESD-609 Kodu

e3

Fall Time Typ

40 ns

Additional Feature

AVALANCHE RATED

Gate To Source Voltage Vgs

30V

Threshold Voltage

3.75V

Yükseklik

6.2mm

Parça Durumu

Active

Rise Time

27ns

Element Configuration

Single

Turn On Delay Time

17 ns

Pin Sayısı

3

Vgs Max

±30V

Tepe Reflow Sıcaklığı (°C)

260