STD2HNK60Z

Teknik Özellikler

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

4.8 Ω @ 1A, 10V

Pulsed Drain Currentmax Idm

8A

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipation Max

45W Tc

Kurşunsuz

Lead Free

Vgsth Max Id

4.5V @ 50μA

Operating Mode

ENHANCEMENT MODE

Fet Type

N-Channel

Drain To Source Breakdown Voltage

600V

Fabrika Tedarik Süresi

12 Weeks

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

15nC @ 10V

Radyasyon Dayanımı

No

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Jedec95 Code

TO-252AA

Ambalaj

Tape & Reel (TR)

Drain Currentmax Abs Id

2A

Transistor Element Material

SILICON

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Current Continuous Drain Id25

2A Tc

Number Of Elements

1

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

10V

JESD-609 Kodu

e3

Fall Time Typ

50 ns

Gate To Source Voltage Vgs

30V

Parça Durumu

Active

Rise Time

30ns

Element Configuration

Single

Turn On Delay Time

10 ns

Pin Sayısı

3

Vgs Max

±30V

Tepe Reflow Sıcaklığı (°C)

260

Tepe Reflow Süresi (maks. sn)

30

Montaj

Surface Mount

ECCN Kodu

EAR99

Terminal Kaplaması

Matte Tin (Sn) - annealed