STD25NF10T4

Teknik Özellikler

Uzunluk

6.6mm

Avalanche Energy Rating Eas

480 mJ

Max Junction Temperature Tj

175°C

Montaj Tipi

Surface Mount

Operating Mode

ENHANCEMENT MODE

Reach Svhc

No SVHC

Fet Type

N-Channel

Akım Değeri

25A

Drain To Source Breakdown Voltage

100V

Çalışma Sıcaklığı

-55°C~175°C TJ

Power Dissipation Max

100W Tc

Nominal Vgs

3 V

Terminal

SMD/SMT

Kurşunsuz

Lead Free

Vgsth Max Id

4V @ 250μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

38m Ω @ 12.5A, 10V

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

10V

Number Of Elements

1

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Transistor Element Material

SILICON

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Current Continuous Drain Id25

25A Tc

Radyasyon Dayanımı

No

Gate Charge Qg Max Vgs

55nC @ 10V

Number Of Channels

1

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Ambalaj

Tape & Reel (TR)

Pin Sayısı

3

Contact Plating

Tin

Vgs Max

±20V

Yükseklik

2.63mm

Parça Durumu

Active

Rise Time

60ns

Element Configuration

Single

Turn On Delay Time

17 ns

Fall Time Typ

15 ns

Gate To Source Voltage Vgs

20V