STD1NK60T4

Teknik Özellikler

Gate To Source Voltage Vgs

30V

Parça Durumu

Active

Ambalaj

Tape & Reel (TR)

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Montaj Tipi

Surface Mount

Input Capacitance Ciss Max Vds

156pF @ 25V

Rds On Max Id Vgs

8.5 Ω @ 500mA, 10V

Power Dissipation

30W

Terminal Kaplaması

Matte Tin (Sn) - annealed

Reach Svhc

No SVHC

Power Dissipation Max

30W Tc

Temel Parça No

STD1NK

Rise Time

5ns

Vgsth Max Id

3.7V @ 250μA

Terminal Formu

GULL WING

Fabrika Tedarik Süresi

12 Weeks

Drain To Source Breakdown Voltage

600V

Element Configuration

Single

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Pin Sayısı

3

Turn On Delay Time

6.5 ns

Uzunluk

6.6mm

Terminal Sayısı

2

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Continuous Drain Current Id

1A

Akım Değeri

1A

Max Junction Temperature Tj

150°C

Transistor Application

SWITCHING

Tepe Reflow Sıcaklığı (°C)

260

Fall Time Typ

25 ns

Manufacturer Package Identifier

TO-252-P032P

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

1A Tc

Number Of Channels

1

Drive Voltage Max Rds On Min Rds On

10V

Operating Mode

ENHANCEMENT MODE

Seri

SuperMESH™

Jesd30 Code

R-PSSO-G2

Vgs Max

±30V