STD18N65M5

Teknik Özellikler

Fabrika Tedarik Süresi

17 Weeks

Drain To Source Breakdown Voltage

650V

Element Configuration

Single

ECCN Kodu

EAR99

Vgsth Max Id

5V @ 250μA

Terminal Formu

GULL WING

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Continuous Drain Current Id

15A

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Turn On Delay Time

36 ns

Terminal Sayısı

2

Uzunluk

6.6mm

Ambalaj

Tape & Reel (TR)

Parça Durumu

Active

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Montaj Tipi

Surface Mount

Gate To Source Voltage Vgs

25V

Temel Parça No

STD18

Power Dissipation Max

110W Tc

Rise Time

7ns

Input Capacitance Ciss Max Vds

1240pF @ 100V

Rds On Max Id Vgs

220m Ω @ 7.5A, 10V

Power Dissipation

110W

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj

Surface Mount

Gate Charge Qg Max Vgs

31nC @ 10V

Number Of Elements

1

Fet Type

N-Channel

Operating Mode

ENHANCEMENT MODE

Seri

MDmesh™ V

Contact Plating

Tin

Tepe Reflow Sıcaklığı (°C)

260

Fall Time Typ

9 ns

Case Connection

DRAIN

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

15A Tc

Drive Voltage Max Rds On Min Rds On

10V

Direnç

220mOhm

Pulsed Drain Currentmax Idm

60A