STD150N3LLH6

Teknik Özellikler

Drain To Source Breakdown Voltage

30V

Element Configuration

Single

ECCN Kodu

EAR99

Terminal Formu

GULL WING

Vgsth Max Id

2.5V @ 250μA

Continuous Drain Current Id

80A

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Pin Sayısı

3

Uzunluk

6.6mm

Terminal Sayısı

2

Turn On Delay Time

17 ns

Parça Durumu

Active

Ambalaj

Tape & Reel (TR)

Montaj Tipi

Surface Mount

Gate To Source Voltage Vgs

20V

Temel Parça No

STD15

Power Dissipation Max

110W Tc

Terminal Kaplaması

Matte Tin (Sn) - annealed

Reach Svhc

No SVHC

Rise Time

18ns

Rds On Max Id Vgs

2.8m Ω @ 40A, 10V

Input Capacitance Ciss Max Vds

3700pF @ 25V

Power Dissipation

110W

Avalanche Energy Rating Eas

525 mJ

Montaj

Surface Mount

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

29nC @ 4.5V

Number Of Elements

1

Fet Type

N-Channel

Operating Mode

ENHANCEMENT MODE

Seri

DeepGATE™, STripFET™ VI

Tepe Reflow Süresi (maks. sn)

30

Tepe Reflow Sıcaklığı (°C)

260

Fall Time Typ

46 ns

Case Connection

DRAIN

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

80A Tc

Drive Voltage Max Rds On Min Rds On

4.5V 10V